Manufacturer Part Number
NSVBC124EPDXV6T1G
Manufacturer
onsemi
Introduction
Discrete semiconductor device
Bipolar junction transistor (BJT) array with pre-biased transistors
Product Features and Performance
High voltage and current handling capabilities
Low collector-emitter saturation voltage
Wide range of collector-emitter breakdown voltages
Stable and consistent electrical characteristics
Compact surface mount package
Product Advantages
Suitable for automotive and industrial applications
Improved reliability and performance
Space-efficient design
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 50V
Collector Current (Max): 100mA
Power Dissipation (Max): 339mW
Current Gain (hFE) (Min): 60 @ 5mA, 10V
Base Resistor (R1): 22kOhms
Emitter-Base Resistor (R2): 22kOhms
Quality and Safety Features
AEC-Q101 qualified for automotive applications
RoHS3 compliant
Compatibility
Suitable for a wide range of electronic circuits and systems
Application Areas
Automotive electronics
Industrial control systems
Power management circuits
Analog signal processing
Product Lifecycle
Current product offering
Availability of replacement or upgrade options
Key Reasons to Choose
Reliable and robust performance
Compact and space-saving design
Automotive and industrial grade quality
Consistent electrical characteristics
Suitable for a variety of applications