NSVBC817-16LT1G - onsemi

Manufacturer Part Number

NSVBC817-16LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) Package

Operating Temperature: -65°C to 150°C

Power Dissipation: 225 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current (Max): 500 mA

Collector Cutoff Current (Max): 100 nA

Collector-Emitter Saturation Voltage: 700 mV @ 50 mA, 500 mA

DC Current Gain (hFE): 100 Min @ 100 mA, 1 V

Transition Frequency: 100 MHz

Product Advantages

Compact surface mount package

Wide operating temperature range

Suitable for high-speed switching applications

Key Technical Parameters

Bipolar Junction Transistor (NPN)

Tape & Reel Packaging

Surface Mount Mounting Type

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuit designs requiring a high-performance bipolar transistor

Application Areas

High-speed switching circuits

Amplifier circuits

Logic gates

Driver circuits

Product Lifecycle

Currently available

No plans for discontinuation

Key Reasons to Choose This Product

Compact and space-saving package

Wide operating temperature range for versatile applications

High current handling capability and switching speed

Reliable performance and RoHS compliance for quality assurance