NSVBC114YDXV6T1G - onsemi

Manufacturer Part Number

NSVBC114YDXV6T1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Products

Transistors Bipolar (BJT) Arrays, Pre-Biased

Product Features and Performance

RoHS3 Compliant

SOT-563 package

Power Rating: 500mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 300μA, 10mA

Transistor Type: 2 NPN Pre-Biased (Dual)

DC Current Gain (hFE): 80 (Min) @ 5mA, 10V

Base Resistor: 10kΩ

Emitter-Base Resistor: 47kΩ

Surface Mount Mounting

Product Advantages

Compact SOT-563 package

Pre-biased transistor array for simplified circuit design

Suitable for various analog and digital applications

Key Technical Parameters

Power Rating: 500mW

Collector-Emitter Breakdown Voltage: 50V

Collector Current (Max): 100mA

Collector Cutoff Current (Max): 500nA

Collector-Emitter Saturation Voltage: 250mV @ 300μA, 10mA

DC Current Gain (hFE): 80 (Min) @ 5mA, 10V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with a wide range of electronic circuits and applications

Application Areas

Analog and digital circuit designs

Amplifiers, switches, and logic gates

Consumer electronics, industrial equipment, and more

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose This Product

Compact SOT-563 package for space-constrained designs

Pre-biased transistor array simplifies circuit design

Suitable for a variety of analog and digital applications

Reliable performance with key technical parameters

RoHS3 compliance for environmental sustainability