Manufacturer Part Number
MJL3281AG
Manufacturer
onsemi
Introduction
High Power NPN Bipolar Junction Transistor
Product Features and Performance
High power handling capability up to 200W
High collector-emitter voltage breakdown of 260V
High collector current rating up to 15A continuous
High collector cutoff current up to 50A
Low saturation voltage of 3V @ 10A collector current
High current gain of 75 minimum @ 5A collector current
Wide operating temperature range of -65°C to 150°C
Product Advantages
Robust and reliable performance
Suitable for high power switching and amplifier applications
Excellent thermal stability and dissipation
Key Technical Parameters
Power Rating: 200W
Collector-Emitter Breakdown Voltage: 260V
Collector Current (Continuous): 15A
Collector Cutoff Current: 50A
Saturation Voltage: 3V @ 10A
Current Gain: 75 minimum @ 5A
Transition Frequency: 30MHz
Quality and Safety Features
RoHS3 compliant
TO-264 package for efficient heat dissipation
Compatibility
Suitable for a wide range of high power switching and amplifier applications
Application Areas
High power switching circuits
High power linear amplifiers
Industrial and automotive power electronics
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade parts available
Key Reasons to Choose This Product
Robust and reliable performance for high power applications
Excellent thermal management and stability
Wide operating temperature range
High current handling capability
Cost-effective solution for high power electronics