Manufacturer Part Number
MJL3281A
Manufacturer
onsemi
Introduction
High-power NPN silicon transistor for switching and amplifying applications
Product Features and Performance
Capable of handling high power up to 200W
High collector-emitter breakdown voltage of 260V
High collector current rating up to 15A
High current gain (hFE) of 75 at 5A, 5V
High frequency capability up to 30MHz
Product Advantages
Robust and reliable performance
Suitable for high-power switching and amplifying circuits
Capable of withstanding harsh operating conditions
Key Technical Parameters
Collector-Emitter Voltage (VCEO): 260V
Collector Current (IC): 15A
Collector-Emitter Saturation Voltage (VCE(sat)): 3V @ 1A, 10A
Current Gain (hFE): 75 @ 5A, 5V
Transition Frequency (fT): 30MHz
Quality and Safety Features
RoHS non-compliant
TO-264 package for efficient heat dissipation
Compatibility
Suitable for through-hole mounting
Compatible with various electronic applications requiring high-power switching and amplifying capabilities
Application Areas
Power amplifiers
Motor drives
Switched-mode power supplies
Industrial control systems
Product Lifecycle
This product is an established and mature design
Replacements or upgrades may be available, but the product is still actively supported
Several Key Reasons to Choose This Product
Excellent power handling capability up to 200W
High voltage and current ratings for demanding applications
High current gain and frequency performance
Robust and reliable design suitable for harsh environments
Efficient heat dissipation through the TO-264 package
