Manufacturer Part Number
MJL4302AG
Manufacturer
onsemi
Introduction
High-power PNP bipolar junction transistor for use in power amplifier, switching, and relay driver applications.
Product Features and Performance
High power handling capability up to 230 W
High voltage rating up to 350 V
High collector current up to 15 A
High collector cutoff current up to 100 A
Low saturation voltage of 1 V at 800 mA, 8 A
High current gain of 80 minimum at 5 A, 5 V
High transition frequency of 35 MHz
Product Advantages
Robust and reliable performance
Efficient power handling
Suitable for high-current, high-voltage applications
Easy to integrate into power electronics circuits
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 350 V
Collector Current (Max): 15 A
Collector Cutoff Current (Max): 100 A
Collector-Emitter Saturation Voltage: 1 V @ 800 mA, 8 A
DC Current Gain: 80 @ 5 A, 5 V
Transition Frequency: 35 MHz
Quality and Safety Features
RoHS3 compliant
Housed in a rugged TO-264 package
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power amplifiers
Switching circuits
Relay drivers
Other high-power, high-voltage electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
Excellent power handling and voltage capabilities
High current and frequency performance
Reliable and robust construction
Compatibility with a wide range of applications
Availability of replacement and upgrade options
