Manufacturer Part Number
MJL4281AG
Manufacturer
onsemi
Introduction
High-power bipolar junction transistor (BJT) in a TO-264 package
Designed for use in high-power switching and amplifier applications
Product Features and Performance
High power handling capability up to 230W
High voltage rating up to 350V
High collector current up to 15A
High collector cutoff current up to 100A
Low collector-emitter saturation voltage of 1V @ 800mA, 8A
High DC current gain of 80 min @ 5A, 5V
High transition frequency of 35MHz
Product Advantages
Robust and reliable performance
Efficient power handling
Suitable for high-power switching and amplifier applications
Key Technical Parameters
Power Rating: 230W
Collector-Emitter Breakdown Voltage: 350V
Collector Current (Max): 15A
Collector Cutoff Current (Max): 100A
Collector-Emitter Saturation Voltage: 1V @ 800mA, 8A
DC Current Gain: 80 min @ 5A, 5V
Transition Frequency: 35MHz
Quality and Safety Features
RoHS3 compliant
TO-264 package for reliable thermal management
Compatibility
Through-hole mounting
Application Areas
High-power switching circuits
Power amplifiers
Industrial and automotive power electronics
Product Lifecycle
This product is currently in active production and is not nearing discontinuation.
Replacement or upgrade options are available from onsemi.
Several Key Reasons to Choose This Product
High power handling capability
High voltage and current ratings
Efficient power conversion with low saturation voltage
Robust and reliable performance
Suitable for a wide range of high-power applications
