Manufacturer Part Number
MJL21193G
Manufacturer
onsemi
Introduction
High-power PNP silicon power transistor
Product Features and Performance
High power dissipation capability up to 200 W
High collector-emitter breakdown voltage up to 250 V
High collector current up to 16 A
High current gain up to 100 A
High frequency transition up to 4 MHz
Product Advantages
Robust and reliable performance
High power handling capability
High voltage and current ratings
Suitable for high-power switching and amplifier applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 250 V
Collector Current (Max): 16 A
Collector Cutoff Current (Max): 100 A
VCE Saturation Voltage (Max): 4 V @ 3.2 A, 16 A
DC Current Gain (Min): 25 @ 8 A, 5 V
Transition Frequency: 4 MHz
Quality and Safety Features
RoHS3 compliant
Reliable TO-264 package design
Compatibility
Through-hole mounting
Suitable for a wide range of high-power electronic applications
Application Areas
High-power switching circuits
Audio power amplifiers
Motor control systems
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely available device from onsemi.
Replacement or upgraded options may be available depending on specific application requirements.
Key Reasons to Choose This Product
Excellent power handling capability for high-power applications
High voltage and current ratings for reliable performance
High frequency operation for fast switching applications
Robust and reliable TO-264 package design
RoHS3 compliance for environmental responsibility