Manufacturer Part Number
MJL21193
Manufacturer
onsemi
Introduction
High-power PNP bipolar junction transistor (BJT)
Designed for use in high-power switching and amplifier applications
Product Features and Performance
High power handling capability up to 200 watts
High voltage rating of up to 250 volts
High collector current rating up to 16 amps
Wide operating temperature range of -65°C to 150°C
High current gain of at least 25 at 8 amps and 5 volts
Transition frequency of 4 MHz
Product Advantages
Robust and reliable performance in high-power applications
Excellent thermal management for efficient heat dissipation
Versatile for use in various high-power electronic circuits
Key Technical Parameters
Power Rating: 200 watts
Collector-Emitter Breakdown Voltage: 250 volts
Collector Current: 16 amps
Collector Cutoff Current: 100 amps
Saturation Voltage: 4 volts at 3.2 amps, 16 amps
Current Gain: Minimum 25 at 8 amps, 5 volts
Transition Frequency: 4 MHz
Quality and Safety Features
RoHS non-compliant
Housed in a TO-264 package for through-hole mounting
Compatibility
Compatible with various high-power electronic circuits and applications
Application Areas
High-power switching and amplifier circuits
Power supplies
Motor control
Industrial electronics
Product Lifecycle
This product is still in active production and not nearing discontinuation.
Replacements or upgrades may be available from the manufacturer or other suppliers.
Several Key Reasons to Choose This Product
Robust and reliable performance in high-power applications
Excellent thermal management for efficient heat dissipation
High power handling capability up to 200 watts
High voltage and current ratings for versatile use
Fast transition frequency of 4 MHz for high-speed applications