Manufacturer Part Number
MJL1302AG
Manufacturer
onsemi
Introduction
High-power PNP silicon transistor
Product Features and Performance
Handles up to 200W of power
Collector-emitter breakdown voltage of 260V
Collector current up to 15A
Collector cutoff current up to 50A
Saturation voltage of 3V at 1A, 10A
DC current gain of 75 at 5A, 5V
Transition frequency of 30MHz
Product Advantages
Robust and reliable performance
Suitable for high-power applications
Efficient power handling
Key Technical Parameters
Power rating: 200W
Collector-emitter breakdown voltage: 260V
Collector current: 15A
Collector cutoff current: 50A
Saturation voltage: 3V @ 1A, 10A
DC current gain: 75 @ 5A, 5V
Transition frequency: 30MHz
Quality and Safety Features
RoHS3 compliant
TO-264 package for efficient heat dissipation
Compatibility
Through-hole mounting
Application Areas
High-power amplifiers
Switching power supplies
Motor control circuits
Industrial and automotive electronics
Product Lifecycle
Current and actively available product
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Robust and reliable high-power performance
Efficient thermal management in the TO-264 package
Suitable for a wide range of high-power applications
Competitive technical specifications compared to similar products
