Manufacturer Part Number
MJL21196G
Manufacturer
onsemi
Introduction
The MJL21196G is a high-power NPN bipolar junction transistor (BJT) designed for use in power amplifier and switching applications.
Product Features and Performance
High power handling capability up to 200 watts
Collector-emitter breakdown voltage of 250 volts
Collector current up to 16 amperes
High DC current gain of 25 minimum at 8 amps, 5 volts
Transition frequency of 4 MHz
Wide operating temperature range of -65°C to 150°C
Product Advantages
Robust design for high-power applications
Excellent electrical characteristics for efficient power amplification and switching
Reliable performance over a wide temperature range
Key Technical Parameters
Power Rating: 200 watts
Collector-Emitter Breakdown Voltage: 250 volts
Collector Current: 16 amperes
DC Current Gain: 25 minimum at 8 amps, 5 volts
Transition Frequency: 4 MHz
Operating Temperature Range: -65°C to 150°C
Quality and Safety Features
RoHS3 compliant for environmental responsibility
TO-264 package for secure mounting and heat dissipation
Compatibility
Through-hole mounting for easy integration into various circuit designs
Application Areas
Power amplifiers
Switching power supplies
Motor control circuits
Automotive electronics
Product Lifecycle
Mature product with ongoing availability and support from the manufacturer
Replacement parts and upgrades may be available
Key Reasons to Choose This Product
High-power handling capability for demanding applications
Excellent electrical characteristics for efficient performance
Wide operating temperature range for reliable operation in diverse environments
RoHS3 compliance for environmentally-conscious design
Compatibility with common through-hole mounting for easy integration
