Manufacturer Part Number
FQD2N80TM
Manufacturer
onsemi
Introduction
The FQD2N80TM is a discrete N-channel MOSFET transistor designed for a wide range of power conversion and control applications.
Product Features and Performance
800V drain-to-source voltage rating
3Ω maximum on-resistance at 900mA, 10V
8A continuous drain current at 25°C case temperature
550pF maximum input capacitance at 25V
5W power dissipation at 25°C ambient temperature, 50W at 25°C case temperature
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power conversion
Compact TO-252AA package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 6.3Ω @ 900mA, 10V
Continuous Drain Current (Id): 1.8A at 25°C
Input Capacitance (Ciss): 550pF @ 25V
Power Dissipation: 2.5W at 25°C ambient, 50W at 25°C case
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Surface mount TO-252AA package
Application Areas
Power conversion and control applications
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available, depending on the specific application requirements.
Key Reasons to Choose This Product
High voltage and current handling capabilities for demanding power applications
Low on-resistance for efficient power conversion and reduced power losses
Compact and thermally efficient TO-252AA package
Wide operating temperature range for reliable operation in various environments
Compliance with RoHS3 regulations for environmentally-conscious designs
FQD2N65CFCS