Manufacturer Part Number
FQD2N60CTM
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, high-performance N-Channel MOSFET
Product Features and Performance
Drain to Source Voltage (Vdss) of 600V
Low on-resistance (Rds(on)) of 4.7Ω at 950mA, 10V
Continuous Drain Current (ID) of 1.9A at 25°C
Operating temperature range of -55°C to 150°C
Fast switching performance
Low gate charge (Qg) of 12nC at 10V
Product Advantages
Excellent power handling capabilities
High voltage operation
Efficient power conversion
Reliable and robust design
Key Technical Parameters
Vdss: 600V
Rds(on): 4.7Ω at 950mA, 10V
ID: 1.9A at 25°C
Operating temperature: -55°C to 150°C
Qg: 12nC at 10V
Quality and Safety Features
Manufactured using high-quality MOSFET technology
Robust and reliable design for long-term performance
Designed to meet safety and regulatory requirements
Compatibility
Suitable for a wide range of power electronics applications
Easily integrates into existing designs
Application Areas
Switching power supplies
Motor drives
Home appliances
Industrial automation
Renewable energy systems
Product Lifecycle
Currently available for purchase
No known plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent power handling capabilities
High voltage operation for demanding applications
Efficient power conversion for improved system performance
Reliable and robust design for long-term reliability
Compatibility with a wide range of power electronics applications
