Manufacturer Part Number
FQD2N60CTF
Manufacturer
Fairchild (onsemi)
Introduction
The FQD2N60CTF is a discrete N-channel power MOSFET transistor designed for a wide range of power switching applications.
Product Features and Performance
600V Drain-Source Voltage
9A Continuous Drain Current at 25°C
7Ω Maximum On-State Resistance
235pF Input Capacitance
12nC Maximum Gate Charge
-55°C to 150°C Operating Temperature Range
Product Advantages
High voltage and current handling capabilities
Low on-state resistance for efficient power switching
Fast switching speed and low gate charge for high-frequency applications
Wide operating temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 4.7Ω
Drain Current (Id): 1.9A
Input Capacitance (Ciss): 235pF
Gate Charge (Qg): 12nC
Quality and Safety Features
RoHS3 compliant
TO-252 (D-Pak) surface mount package
Suitable for high-reliability and safety-critical applications
Compatibility
The FQD2N60CTF is compatible with a wide range of power electronics circuits and can be used as a replacement for similar MOSFET devices.
Application Areas
Power supplies
Motor drives
Inverters
Switched-mode power supplies
Industrial and consumer electronics
Product Lifecycle
The FQD2N60CTF is an active product and is not nearing discontinuation. Replacement or upgrade options may be available from the manufacturer.
Key Reasons to Choose
High voltage and current handling capabilities
Low on-state resistance for efficient power switching
Fast switching speed and low gate charge for high-frequency applications
Wide operating temperature range
RoHS3 compliance and quality packaging for reliability
Compatibility with a wide range of power electronics applications
FQD2N60C MOSFairchild (onsemi)