Manufacturer Part Number
FQD2N60CTM
Manufacturer
onsemi
Introduction
The FQD2N60CTM is a high-performance N-channel MOSFET transistor designed for power switching applications.
Product Features and Performance
600V Drain-Source Voltage (Vdss)
7Ω on-resistance (Rds(on)) at 950mA, 10V
9A continuous drain current (Id) at 25°C case temperature
235pF input capacitance (Ciss) at 25V
12nC gate charge (Qg) at 10V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power switching performance
Low on-resistance for reduced power losses
High voltage handling capability
Compact surface mount package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.7Ω
Continuous Drain Current (Id): 1.9A
Input Capacitance (Ciss): 235pF
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Quality and Safety Features
RoHS3 compliant
Reliable TO-252AA package
Compatibility
Compatible with a wide range of power supply and control circuit designs
Application Areas
Power switching applications
Motor drives
Power converters
Appliances and industrial equipment
Product Lifecycle
This product is an active and widely available part. No discontinuation or replacement plans are known at this time.
Key Reasons to Choose This Product
Excellent power switching performance with low on-resistance
High voltage handling capability for a wide range of applications
Compact and reliable surface mount package
Proven and reliable onsemi technology
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