Manufacturer Part Number
FQD2N60CTF
Manufacturer
onsemi
Introduction
The FQD2N60CTF is a high-voltage N-channel MOSFET transistor from onsemi, suitable for a variety of power electronics applications.
Product Features and Performance
600V drain-source voltage rating
7Ω maximum on-resistance at 950mA, 10V
9A continuous drain current at 25°C case temperature
235pF maximum input capacitance at 25V
5W power dissipation at 25°C ambient temperature, 44W at 25°C case temperature
Product Advantages
High voltage and current handling capability
Low on-resistance for efficient power conversion
Surface mount package for compact design
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.7Ω @ 950mA, 10V
Drain Current (Id): 1.9A @ 25°C
Input Capacitance (Ciss): 235pF @ 25V
Power Dissipation: 2.5W @ 25°C, 44W @ 25°C
Quality and Safety Features
Rated for operating temperatures from -55°C to 150°C
Meets relevant safety and quality standards
Compatibility
Suitable for a variety of power electronics applications, including power supplies, motor drives, and industrial controls
Application Areas
Power conversion and control
Industrial electronics
Consumer electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available
Key Reasons to Choose This Product
High voltage and current handling capability
Low on-resistance for efficient power conversion
Compact surface mount package
Wide operating temperature range
Suitable for a variety of power electronics applications
FQD2N65CFCS