Manufacturer Part Number
FQD2N90TF
Manufacturer
onsemi
Introduction
High-voltage N-channel power MOSFET in a surface-mount TO-252 (DPAK) package.
Product Features and Performance
Operates at high voltages up to 900 V
Low on-resistance of 7.2 Ω at 850 mA and 10 V
Continuous drain current of 1.7 A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 500 pF at 25 V
Low gate charge of 15 nC at 10 V
Product Advantages
Efficient power handling
Compact surface-mount package
Wide voltage and temperature operating range
Low switching losses
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900 V
Gate-to-Source Voltage (Vgs max): ±30 V
On-Resistance (Rds(on) max): 7.2 Ω
Continuous Drain Current (Id): 1.7 A
Input Capacitance (Ciss max): 500 pF
Power Dissipation (max): 2.5 W (Ta), 50 W (Tc)
Quality and Safety Features
Robust design for reliable performance
Compliant with relevant safety standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial electronics
Lighting ballasts
Welding equipment
Product Lifecycle
This product is currently in production and available
Replacement or upgrade options may be available from the manufacturer
Several Key Reasons to Choose This Product
High-voltage and high-current handling capabilities
Efficient power delivery with low on-resistance
Compact surface-mount package for space-constrained designs
Wide operating temperature range for versatile applications
Robust design for reliable performance
Compatibility with a broad range of power conversion and control systems