Manufacturer Part Number
FQD2P40TM
Manufacturer
onsemi
Introduction
N-channel enhancement-mode power MOSFET
Product Features and Performance
Optimized for high-frequency, high-efficiency switching applications
Low on-resistance, low gate charge
Fast switching speed
Product Advantages
Efficient power conversion
Reduced power dissipation
Improved system reliability
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 400 V
Gate-to-Source Voltage (Vgs): ±30 V
On-State Resistance (Rds(on)): 6.5 Ω @ 780 mA, 10 V
Continuous Drain Current (Id): 1.56 A @ 25°C
Input Capacitance (Ciss): 350 pF @ 25 V
Power Dissipation (Max): 2.5 W (Ta), 38 W (Tc)
Quality and Safety Features
ROHS3 compliant
Qualified to AEC-Q101 standard
Compatibility
Surface mount package (TO-252-3, DPack)
Compatible with common MOSFET drive circuits
Application Areas
Switching power supplies
Motor drives
AC/DC converters
Inverters
High-frequency, high-efficiency power conversion applications
Product Lifecycle
Currently in production
Mature product with available replacements and upgrades
Key Reasons to Choose This Product
Excellent efficiency and low power dissipation
Fast switching speed for high-frequency applications
Reliable and robust design
Proven performance in a wide range of power conversion applications
Availability of suitable replacement and upgrade options
FQD2P25TFFSC