Manufacturer Part Number
FQD2N90TM
Manufacturer
onsemi
Introduction
The FQD2N90TM is a discrete N-Channel MOSFET transistor designed for power switching and control applications.
Product Features and Performance
900V Drain-Source Voltage
2Ohm On-Resistance
7A Continuous Drain Current
500pF Input Capacitance
15nC Gate Charge
Product Advantages
High breakdown voltage for improved reliability
Low on-resistance for efficient power switching
Surface mount package for compact design
Operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-Source Voltage (Vdss): 900V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 7.2Ohm
Continuous Drain Current (Id): 1.7A
Input Capacitance (Ciss): 500pF
Gate Charge (Qg): 15nC
Quality and Safety Features
RoHS3 compliant
TO-252AA package for reliable surface mount connection
Compatibility
Suitable for a wide range of power switching and control applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
The FQD2N90TM is an active product and not nearing discontinuation
Replacement or upgrade options are available from onsemi
Key Reasons to Choose This Product
High breakdown voltage for improved reliability in high-voltage applications
Low on-resistance for efficient power switching and reduced power dissipation
Surface mount package for compact and space-saving designs
Wide operating temperature range for use in various environments
RoHS3 compliance for environmentally friendly applications
FQD2N65CFCS