Manufacturer Part Number
FQD2N90TF
Manufacturer
Fairchild (onsemi)
Introduction
High voltage N-channel MOSFET transistor
Product Features and Performance
900V drain-to-source voltage
Low on-resistance of 7.2Ω
Continuous drain current of 1.7A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 500pF
Maximum power dissipation of 2.5W at 25°C ambient temperature and 50W at 25°C case temperature
Product Advantages
Suitable for high voltage, high power applications
Efficient power conversion with low conduction losses
Robust design for reliable operation in harsh environments
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 7.2Ω @ 850mA, 10V
Continuous Drain Current (Id): 1.7A @ 25°C
Input Capacitance (Ciss): 500pF @ 25V
Power Dissipation (Pd): 2.5W @ 25°C, 50W @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-252 (D-Pak) surface mount package
Compatibility
Suitable for a wide range of high voltage, high power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current product offering, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
High voltage and high power capabilities
Efficient power conversion with low on-resistance
Robust design for reliable operation in harsh environments
Wide operating temperature range
RoHS3 compliance for environmental sustainability