Manufacturer Part Number
FGH50T65UPD
Manufacturer
onsemi
Introduction
High-power integrated gate bipolar transistor (IGBT) for industrial and power supply applications.
Product Features and Performance
Trench Field Stop IGBT technology
High power handling capability up to 340W
Fast switching with low switching losses
Low on-state voltage drop
Wide operating temperature range from -55°C to 175°C
High current carrying capacity up to 100A
Product Advantages
Improved energy efficiency through low conduction and switching losses
Robust design for reliable operation in harsh environments
Versatile application in various industrial and power supply systems
Key Technical Parameters
Collector-Emitter Voltage (VCE): 650V
Collector Current (IC): 100A
On-state Voltage (VCE(on)): 2.3V @ 15V, 50A
Reverse Recovery Time (trr): 53ns
Gate Charge (Qg): 230nC
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal management
Compatibility
Compatible with various industrial and power supply applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Power conversion systems
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High-performance IGBT with low losses and fast switching for improved energy efficiency
Robust design and wide operating temperature range for reliable operation in harsh environments
Versatile application in various industrial and power supply systems
Availability of replacement and upgrade options from the manufacturer
