Manufacturer Part Number
FGH40T65UPD
Manufacturer
onsemi
Introduction
High performance IGBT transistor for industrial and power applications.
Product Features and Performance
Trench field stop IGBT technology
Low on-state voltage (Vce(on))
Fast switching speed
High power density
High voltage capability up to 650V
High current capability up to 80A continuous, 120A pulsed
Product Advantages
Efficient power conversion
Compact design
Reliable operation
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 43ns
Gate Charge: 177nC
Switching Energy: 1.59mJ (on), 580J (off)
Td (on/off) @ 25°C: 20ns/144ns
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 175°C
Compatibility
Through-hole mounting in TO-247-3 package
Application Areas
Industrial motor drives, power supplies, welding equipment, and other high power applications
Product Lifecycle
This product is currently in production and available. No plans for discontinuation or replacement at this time.
Key Reasons to Choose This Product
High efficiency and power density
Excellent switching performance
Reliable operation over wide temperature range
Compatible with standard TO-247-3 package
Suitable for a variety of high power industrial applications
