Manufacturer Part Number
FGH50N6S2D
Manufacturer
onsemi
Introduction
High-performance insulated-gate bipolar transistor (IGBT) for industrial applications
Product Features and Performance
Voltage rating up to 600 V
Collector current rating up to 75 A
Low on-state voltage drop
Fast switching speed
Optimized for hard-switching applications
Rugged design for reliable operation
Product Advantages
Excellent thermal cycling and short-circuit capabilities
Minimal switching losses
Robust and reliable performance
Key Technical Parameters
Collector-emitter voltage: 600 V
Collector current: 75 A
On-state voltage drop: 2.7 V @ 15 V, 30 A
Reverse recovery time: 55 ns
Gate charge: 70 nC
Switching energy: 260 J (on), 250 J (off)
Turn-on/off delay time: 13 ns/55 ns
Quality and Safety Features
RoHS compliant
Meets industrial safety standards
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Solar inverters
UPS systems
Product Lifecycle
Currently in production
No known discontinuation or replacement plans
Key Reasons to Choose This Product
Excellent performance and reliability for industrial applications
Optimized for hard-switching and high-power requirements
Robust design with high thermal cycling and short-circuit capability
Low switching losses and fast switching speed
Widely compatible with standard IGBT gate drive circuits
FGH60N60SFFairchild (onsemi)