Manufacturer Part Number
FGH50T65UPD
Manufacturer
Fairchild (onsemi)
Introduction
High-performance IGBT (Insulated Gate Bipolar Transistor) for power electronics applications.
Product Features and Performance
Trench Field Stop IGBT technology
Supports high power and high-efficiency operation
Low on-state voltage drop (Vce(on))
Fast switching with low switching losses
High current capability up to 100A
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power handling capability
High energy efficiency
Reliable and robust design
Optimized for demanding power electronics applications
Key Technical Parameters
Collector-Emitter Voltage (VCES): 650V
Collector Current (IC): 100A
Collector-Emitter Saturation Voltage (VCE(on)): 2.3V
Reverse Recovery Time (trr): 53ns
Quality and Safety Features
Manufactured to high-quality standards
Robust design for reliable operation
Complies with relevant safety standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Inverters
Motor drives
Uninterruptible power supplies (UPS)
Welding equipment
Power supplies
Other high-power switching applications
Product Lifecycle
This product is currently in production and not nearing discontinuation.
Replacement or upgrade options may be available from the manufacturer as technology evolves.
Key Reasons to Choose This Product
High power handling capability and efficiency
Fast switching with low losses
Reliable and robust design for demanding applications
Wide operating temperature range
Compatibility with various power electronics systems
