Manufacturer Part Number
FGH60N60UFDTU
Manufacturer
onsemi
Introduction
High-performance IGBT transistor suitable for various power conversion applications
Product Features and Performance
600V collector-emitter breakdown voltage
120A maximum collector current
Low Vce(on) of 2.4V at 15V, 60A
Short reverse recovery time of 47ns
High-speed switching with turn-on/off times of 23ns/130ns
Product Advantages
Efficient power conversion with low conduction and switching losses
Robust design for reliable operation
Suitable for various industrial and automotive applications
Key Technical Parameters
IGBT type: Field Stop
Voltage rating: 600V
Current rating: 120A continuous, 180A pulsed
Vce(on) rating: 2.4V
Reverse recovery time: 47ns
Gate charge: 188nC
Operating temperature range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal management
Compatibility
Direct replacement for similar IGBT transistors in power conversion systems
Application Areas
Motor drives
Power supplies
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This product is actively available and supported by the manufacturer
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
High power density and efficiency for compact power conversion designs
Reliable and robust performance for demanding industrial and automotive applications
Wide operating temperature range for flexible system integration
Optimized switching characteristics for high-speed power conversion
