Manufacturer Part Number
FGH60N60SMD
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor IGBT Single
Product Features and Performance
ROHS3 Compliant
TO-247-3 Package
Through Hole Mounting
Field Stop IGBT Type
600V Collector-Emitter Breakdown Voltage
120A Collector Current (Max)
5V Collector-Emitter Saturation Voltage @ 15V, 60A
39ns Reverse Recovery Time
189nC Gate Charge
180A Pulsed Collector Current
26mJ Turn-On Switching Energy, 450μJ Turn-Off Switching Energy
18ns Turn-On Delay Time, 104ns Turn-Off Delay Time
Product Advantages
High Voltage and Current Capability
Fast Switching Performance
Compact TO-247-3 Package
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 600V
Current Collector (Ic) (Max): 120A
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 60A
Reverse Recovery Time (trr): 39ns
Gate Charge: 189nC
Current Collector Pulsed (Icm): 180A
Switching Energy: 1.26mJ (on), 450μJ (off)
Td (on/off) @ 25°C: 18ns/104ns
Quality and Safety Features
ROHS3 Compliant
Compatibility
Through Hole Mounting
Application Areas
High Power Switch Mode Power Supplies
Motor Drives
Welding Equipment
Induction Heating
UPS Systems
Product Lifecycle
Currently in Production
Replacements and Upgrades Available
Key Reasons to Choose This Product
High Voltage and Current Capability
Fast Switching Performance
Compact TO-247-3 Package
ROHS3 Compliant
Suitable for a Wide Range of High-Power Applications