Manufacturer Part Number
FGH50T65SQD-F155
Manufacturer
onsemi
Introduction
High power density IGBT for industrial and automotive applications
Product Features and Performance
Trench field stop IGBT technology
Low conduction and switching losses
Fast switching
High short-circuit capability
High current handling capability
Product Advantages
Efficient power conversion
Compact design
Reliable performance
Suitable for high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 650 V
Current Collector (Ic) (Max): 100 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Reverse Recovery Time (trr): 31 ns
Gate Charge: 99 nC
Current Collector Pulsed (Icm): 200 A
Switching Energy: 180J (on), 45J (off)
Td (on/off) @ 25°C: 22ns/105ns
Quality and Safety Features
RoHS3 compliant
Suitable for operation in harsh environments (-55°C ~ 175°C)
Compatibility
Compatible with standard IGBT gate drive circuits
Application Areas
Industrial motor drives
Power supplies
Welding equipment
Induction heating
Traction control
Renewable energy systems
Product Lifecycle
Currently in production
Replacements and upgrades available
Several Key Reasons to Choose This Product
High power handling capability
Efficient power conversion
Fast switching for high-speed applications
Reliable performance in harsh environments
Compact design for space-constrained applications