Manufacturer Part Number
FGH60N60SFDTU
Manufacturer
onsemi
Introduction
High performance insulated gate bipolar transistor (IGBT)
Product Features and Performance
Field stop IGBT technology
Fast switching speed
Low on-state voltage drop
High power capability
Low switching losses
Operating temperature range of -55°C to 150°C
Product Advantages
Efficient power conversion
Reliable performance
Compact and versatile design
Key Technical Parameters
Collector-emitter breakdown voltage: 600V
Collector current (max): 120A
On-state voltage drop: 2.9V @ 15V, 60A
Reverse recovery time: 47ns
Gate charge: 198nC
Switching energy: 1.79mJ (on), 670μJ (off)
Turn-on/off delay time: 22ns/134ns
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable operation
Compatibility
Suitable for use in various power conversion and control applications
Application Areas
Servo drives
Uninterruptible power supplies (UPS)
Welding equipment
Induction heating
Motor drives
Power supplies
Product Lifecycle
Currently available, no indications of discontinuation
Key Reasons to Choose This Product
High power handling capability
Fast switching performance
Low conduction and switching losses
Reliable and robust design
Wide operating temperature range
Compatibility with various power electronics applications
FGH60N60SFDFairchild (onsemi)