Manufacturer Part Number
FGH40T65SHDF-F155
Manufacturer
Fairchild (onsemi)
Introduction
High-performance IGBT transistor for power electronics applications
Product Features and Performance
Field Stop IGBT technology
Low on-state voltage drop
Fast switching speed
High current and voltage handling capability
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Improved efficiency and reduced power losses
Compact design for space-constrained applications
Reliable performance in harsh environments
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 650V
Collector Current (Max): 80A
Collector-Emitter Saturation Voltage: 1.81V @ 15V, 40A
Reverse Recovery Time: 101ns
Gate Charge: 68nC
Quality and Safety Features
Robust TO-247-3 package
Compliant with industry safety standards
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Industrial automation
Product Lifecycle
This product is currently in production and widely available
Replacements or upgrades may be available in the future as technology advances
Key Reasons to Choose This Product
Excellent performance and efficiency
Reliable operation in demanding environments
Compact and versatile design
Proven technology from a reputable manufacturer
FGH50N3Fairchild SemiconductorINSULATED GATE BIPOLAR TRANSISTO