Manufacturer Part Number
FGH40T120SMD-F155
Manufacturer
onsemi
Introduction
The FGH40T120SMD-F155 is a high-performance trench field stop insulated-gate bipolar transistor (IGBT) from onsemi, designed for use in a variety of power conversion and motor control applications.
Product Features and Performance
Trench field stop IGBT technology for improved efficiency and switching performance
High voltage rating of 1200V
High current rating of 80A
Low on-state voltage drop of 2.4V at 40A
Fast switching times with turn-on delay of 40ns and turn-off delay of 475ns
Low switching losses of 2.7mJ (on) and 1.1mJ (off)
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent power handling and efficiency
Reliable and robust design
Suitable for a wide range of power conversion and motor control applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 65ns
Gate Charge: 370nC
Current Collector Pulsed (Icm): 160A
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable and secure mounting
Compatibility
Suitable for a wide range of power conversion and motor control applications
Application Areas
Industrial drives and controls
Power supplies
Renewable energy systems
Welding equipment
Uninterruptible power supplies (UPS)
Product Lifecycle
This product is currently in production and actively available.
Replacements or upgrades may be available in the future as technology advances.
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust design
Fast switching times and low switching losses
Wide operating temperature range
Suitable for a variety of power conversion and motor control applications