Manufacturer Part Number
FGH40T100SMD
Manufacturer
onsemi
Introduction
The FGH40T100SMD is a high-performance single IGBT (Insulated Gate Bipolar Transistor) from onsemi. It is designed for use in a variety of power electronic applications.
Product Features and Performance
Trench Field Stop IGBT technology
High voltage rating up to 1000V
High current capability up to 80A
Low on-state voltage drop (Vce(on))
Fast switching with short turn-on and turn-off times
High power density and efficiency
Wide operating temperature range of -55°C to 175°C
Product Advantages
Excellent performance and reliability
Suitable for high-power, high-efficiency applications
Easy to integrate into power converter designs
Robust and durable construction
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1000V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Reverse Recovery Time (trr): 78ns
Gate Charge: 265nC
Current Collector Pulsed (Icm): 120A
Switching Energy: 2.35mJ (on), 1.15mJ (off)
Td (on/off) @ 25°C: 29ns/285ns
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable and secure mounting
Wide operating temperature range for industrial and automotive applications
Compatibility
Compatible with standard IGBT gate drive circuits
Suitable for use in various power converter designs
Application Areas
Motor drives
Power supplies
Inverters
Welding equipment
Induction heating
Industrial automation
Renewable energy systems
Product Lifecycle
The FGH40T100SMD is an active and widely available product from onsemi. There are no immediate plans for discontinuation, and replacement or upgrade options are available if needed.
Key Reasons to Choose This Product
Excellent performance and efficiency
Robust and reliable design for industrial and automotive applications
Wide operating temperature range and compatibility
Proven track record and support from a reputable manufacturer (onsemi)
Ease of integration into power converter designs
Cost-effective solution for high-power applications
