Manufacturer Part Number
FGH40T120SMD
Manufacturer
Fairchild (onsemi)
Introduction
High-power Trench IGBT transistor with fast switching and low conduction losses.
Product Features and Performance
Trench Field Stop IGBT technology
Low on-state voltage drop
Fast switching speed
High current capability up to 160A
Low gate charge
Wide operating temperature range (-55°C to 175°C)
Product Advantages
Improved efficiency through lower conduction and switching losses
Compact design with high power density
Suitable for high-power applications
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 65ns
Gate Charge: 370nC
Current Collector Pulsed (Icm): 160A
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Td (on/off) @ 25°C: 40ns/475ns
Quality and Safety Features
TO-247 package for high-power and high-reliability applications
Meets industrial safety and quality standards
Compatibility
Suitable for use in a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
This product is currently in production and readily available.
No plans for discontinuation in the near future.
Replacements and upgrades may become available over time as technology advances.
Key Reasons to Choose This Product
High power density and efficiency through advanced Trench Field Stop IGBT technology
Excellent switching performance with low conduction and switching losses
Robust and reliable design in a widely used TO-247 package
Suitable for a broad range of high-power applications
Readily available and well-supported by the manufacturer
FGH40T65Fairchild (onsemi)