Manufacturer Part Number
FGH40T120SMD
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a single Trench Field Stop IGBT (Insulated Gate Bipolar Transistor).
Product Features and Performance
High power rating of 555W
Operating temperature range of -55°C to 175°C (TJ)
Collector-Emitter Breakdown Voltage of 1200V
Collector Current (Ic) of up to 80A
Low Collector-Emitter Saturation Voltage (Vce(on)) of 2.4V @ 15V, 40A
Fast Reverse Recovery Time (trr) of 65ns
Gate Charge of 370nC
Pulsed Collector Current (Icm) of 160A
Switching Energy of 2.7mJ (on) and 1.1mJ (off)
Turn-on and Turn-off Delay Times (Td(on/off)) of 40ns and 475ns respectively
Product Advantages
High power handling capability
Wide operating temperature range
Low conduction and switching losses
Fast switching performance
Reliable and robust design
Key Technical Parameters
IGBT Type: Trench Field Stop
Voltage Collector Emitter Breakdown (Max): 1200V
Current Collector (Ic) (Max): 80A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Reverse Recovery Time (trr): 65ns
Gate Charge: 370nC
Current Collector Pulsed (Icm): 160A
Quality and Safety Features
RoHS3 compliant
Manufacturer's packaging: TO-247-3
Mounting Type: Through Hole
Compatibility
This IGBT is compatible with a wide range of electronic and power conversion applications.
Application Areas
Power Supplies
Motor Drives
Welding Equipment
Uninterruptible Power Supplies (UPS)
Renewable Energy Systems
Industrial Electronics
Product Lifecycle
This IGBT model is currently in production and is not nearing discontinuation. Replacement or upgrade options are available from the manufacturer.
Key Reasons to Choose This Product
High power handling capability for demanding applications
Wide operating temperature range for reliability in diverse environments
Low conduction and switching losses for improved efficiency
Fast switching performance for high-speed power conversion
Robust and reliable design for long-term, consistent performance
