The IRF9640 is a P-Channel enhancement mode silicon-gate power field-effect transistor designed to meet demanding power requirements. It is built to handle a specific level of energy in breakdown avalanche mode, making it reliable in high-performance applications. This MOSFET is suited for various uses such as switching regulators, converters, motor drivers, and relay drivers. One of its standout features is its high input impedance, which allows it to be operated directly from integrated circuits. This makes it not only versatile but also practical for a wide range of electronic designs, ensuring efficient and effective operation.
Technical specifications, features, characteristics, and components with comparable specifications of Vishay Siliconix IRF9640.
Type | Parameter |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Number of Pins | 3 |
Supplier Device Package | TO-220AB |
Weight | 6.000006g |
Current - Continuous Drain (Id) @ 25℃ | 11A Tc |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Number of Elements | 1 |
Power Dissipation (Max) | 125W Tc |
Turn Off Delay Time | 39 ns |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tube |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Max Operating Temperature | 150°C |
Min Operating Temperature | -55°C |
Voltage - Rated DC | -200V |
Current Rating | -11A |
Number of Channels | 1 |
Element Configuration | Single |
Power Dissipation | 125W |
Turn On Delay Time | 13 ns |
FET Type | P-Channel |
Rds On (Max) @ Id, Vgs | 500mOhm @ 6.6A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
Rise Time | 43ns |
Drain to Source Voltage (Vdss) | 200V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 38 ns |
Continuous Drain Current (ID) | 11A |
Gate to Source Voltage (Vgs) | 20V |
Input Capacitance | 1.2nF |
Drain to Source Resistance | 500mOhm |
Rds On Max | 500 mΩ |
Height | 9.01mm |
Length | 10.41mm |
Width | 4.7mm |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |
The IRF9640 is a P-Channel transistor, specifically designed for applications requiring reliable power handling. This type of transistor is ideal for switching and load management tasks in circuits where the P-Channel configuration is preferred. Its design makes it suitable for controlling high-power devices with precision and efficiency.
Housed in a TO-220 package, the IRF9640 is built for ease of use and efficient heat dissipation. The TO-220 package is widely recognized for its robust design, which ensures the transistor remains stable even under varying thermal and mechanical stresses. This feature makes it simple to mount on circuit boards or heatsinks for effective cooling.
The IRF9640 can handle a maximum drain-to-source voltage of -200 V. This high-voltage capacity allows it to perform effectively in circuits requiring significant voltage management. Whether in industrial power systems or smaller electronics, this feature ensures that it remains stable under high-stress conditions.
With a gate-to-source voltage range of ±20 V, this MOSFET provides flexibility in managing input signals. This characteristic allows you to integrate the IRF9640 seamlessly into various circuit designs, from simple controllers to advanced power management systems.
Capable of handling a continuous drain current of -11 A, the IRF9640 is suitable for circuits with moderate to high current demands. This makes it an excellent choice for applications involving motors, power supplies, or other systems requiring consistent current flow.
The on-state resistance of just 500 mΩ is a significant advantage of the IRF9640. This low resistance minimizes power loss during operation, improving the overall efficiency of your circuit. It also reduces heat generation, contributing to the reliability and longevity of the device.
The IRF9640 supports a pulsed drain current of up to -44 A, which is useful for applications that experience short, high-current bursts. This capability makes it a dependable choice for systems requiring occasional high-power surges without compromising the device's performance.
With the ability to dissipate up to 125 W of power, the IRF9640 is designed to manage significant thermal loads effectively. This feature makes it a robust option for high-power circuits, ensuring it remains operational even under demanding conditions.
The IRF9640 operates across a wide temperature range of -55°C to 150°C, making it suitable for use in extreme environments. Whether you’re designing for cold outdoor conditions or high-temperature industrial applications, this transistor provides the reliability needed to handle thermal stress.
The IRF9640 is designed to handle fast voltage changes with ease. This capability makes it suitable for high-speed applications where rapid switching is required, ensuring stability and performance without risking damage to the device.
This feature ensures the IRF9640 can withstand repetitive avalanche conditions, providing durability and reliability in circuits prone to voltage spikes. It adds an extra layer of protection, particularly in power-sensitive applications.
The P-Channel configuration of this transistor is especially beneficial for circuits requiring high-side load switching. Its design simplifies circuit complexity and reduces the number of components needed, saving both space and effort during assembly.
The fast switching capability of the IRF9640 enhances its performance in circuits where timing and speed are critical. This makes it an excellent choice for high-frequency applications like power supplies, converters, and motor controllers.
The IRF9640 can be easily paralleled with other MOSFETs, allowing you to scale up current-handling capabilities when needed. This flexibility makes it a preferred option for high-power applications requiring multiple devices to work in tandem.
With low drive requirements, the IRF9640 can be controlled directly by microcontrollers, integrated circuits, or other low-power devices. This eliminates the need for additional driver components, simplifying circuit design and reducing costs.
As a RoHS-compliant device, the IRF9640 adheres to environmental standards, ensuring it is free of hazardous substances. This compliance not only meets regulatory requirements but also supports sustainable and eco-friendly product development.
Part Number | Description | Manufacturer |
IRF9640 TRANSISTORS | 11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC |
IRF9640-009 TRANSISTORS | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Intertechnologies |
IRF9640-001 TRANSISTORS | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | International Rectifier |
IRF9640-010 TRANSISTORS | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier |
IRF9640-006 TRANSISTORS | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Intertechnologies |
IRF9640PBF TRANSISTORS | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies |
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The IRF9640 is a P-Channel MOSFET in a TO-220 package, designed to handle a continuous drain current of -11A and a maximum load voltage of -200V. It is ideal for various switching and amplification applications, offering fast switching speeds for circuits where quick performance is required. With a low drain-to-source resistance of 500 mΩ, it minimizes power loss, making your circuit more efficient. Additionally, its low drive requirements allow it to work directly with ICs, microcontrollers, and platforms like Arduino.
The IRF9640 works well in switching regulators, helping to control voltage and maintain steady output. This makes it a reliable choice for power supply circuits that require efficient voltage regulation.
You can use the IRF9640 in switching converters to transform electrical power from one form to another. Its ability to handle high-speed switching ensures minimal energy loss, improving the overall performance of your circuit.
In uninterrupted power supplies, the IRF9640 helps maintain consistent power flow during outages. Its reliability makes it suitable for systems that need continuous power delivery, such as backup power setups.
The IRF9640 is often used in battery chargers to manage the charging process efficiently. It regulates current to protect the battery from overcharging and ensures a safe and effective charging cycle.
For solar systems, the IRF9640 helps in managing and optimizing power generated by solar panels. It supports efficient energy transfer, making it a dependable component in solar inverters and controllers.
The IRF9640 is ideal for motor driver circuits, allowing smooth and precise control of motor speed and direction. Its ability to handle high currents ensures reliable performance in motor-based applications.
You can use the IRF9640 as a driver for relays in circuits that need to control high-power devices. It provides stable and efficient operation, ensuring the smooth functioning of relay-based systems.
The IRF9640 is developed by Vishay, a trusted name in the field of power semiconductor products. Vishay, through its Siliconix subsidiary, has focused on creating solutions that enhance the efficiency of power management systems. Their products are known for reducing the space needed for components, making them ideal for portable and compact devices. As a leading provider of low-voltage power MOSFETs, Vishay has built a reputation for delivering reliable components that contribute to the improved operation of electronic systems, especially in handheld and battery-powered devices.
Parameter | IRF9640 | IRFI640GPBF | FQPF10N20C | IRF630FP | IRLS640A |
Manufacturer | Vishay Siliconix | Vishay Siliconix | ON Semiconductor | STMicroelectronics | ON Semiconductor |
Mount | Through Hole | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-220-3 | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-220-3 Full Pack |
Drain to Source Voltage | 200V | - | - | 200V | - |
Continuous Drain Current | 11A (Tc) | 9.5A (Tc) | 9.8A (Tc) | 9.8A (Tc) | 9A (Tc) |
Current - Continuous | 11A (Tc) | 9.5A (Tc) | 9.8A (Tc) | 9.8A (Tc) | 9A (Tc) |
Rds On Max | 500mΩ | - | - | 180mΩ | - |
Gate to Source Voltage (Vgs) | 20V | 30V | 20V | 20V | 20V |
Power Dissipation | 125W | 38W | 40W | 40W | 30W |
Power Dissipation (Tc) | 125W (Tc) | 38W (Tc) | 40W (Tc) | 40W (Tc) | 30W (Tc) |
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The IRF9640 is a P-Channel power MOSFET with an enhancement mode design. It is made to handle specific energy levels in breakdown avalanche mode. This makes it suitable for tasks like switching regulators, motor control, and power conversion. Its high input impedance allows it to work directly with integrated circuits without additional components.
To ensure the IRF9640 works reliably for extended periods, operate it below its maximum ratings. For instance, keep the current under -8.8A and the voltage under -160V. Adding a suitable heatsink helps manage heat effectively, and keeping the operating temperature between -55°C and 150°C will help prevent damage.
P-Channel MOSFETs are often used in load-switching applications. They provide a simple solution for controlling high-side loads and are frequently used in circuits like low-voltage drives and point-of-load systems, where efficient and straightforward load control is needed.
A P-Channel enhancement MOSFET is a semiconductor device with three terminals and an n-substrate. It operates based on majority charge carriers and allows current to flow when a positive voltage is applied between the source and gate. This makes it effective for switching and amplifying signals in electronic circuits.
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