Manufacturer Part Number
IRF630FP
Manufacturer
STMicroelectronics
Introduction
The IRF630FP is a discrete semiconductor product, specifically a single N-Channel MOSFET transistor.
Product Features and Performance
200V drain-to-source voltage
±20V gate-to-source voltage
400mOhm maximum on-resistance at 4.5A and 10V
MOSFET technology
9A continuous drain current at 25°C case temperature
700pF maximum input capacitance at 25V
30W maximum power dissipation at 25°C case temperature
4V maximum gate-to-source threshold voltage at 250A
Product Advantages
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 400mOhm
Continuous Drain Current (Id): 9A
Input Capacitance (Ciss): 700pF
Power Dissipation (Pd): 30W
Quality and Safety Features
RoHS3 compliant
Through-hole mounting
Compatibility
Suitable for a variety of power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for efficient power switching
Wide operating temperature range
RoHS3 compliance for environmental safety
Suitable for a variety of power switching applications
IRF630/FPSTMicroelectronics
IRF630N MOSIR