Manufacturer Part Number
FQPF10N20C
Manufacturer
onsemi
Introduction
High-voltage, high-current N-channel power MOSFET
Product Features and Performance
Wide operating temperature range: -55°C to 150°C
High drain-to-source voltage: 200V
Low on-resistance: 360mΩ @ 4.75A, 10V
High continuous drain current: 9.5A @ 25°C
Low input capacitance: 510pF @ 25V
High power dissipation: 38W
Product Advantages
Suitable for high-voltage, high-current applications
Efficient power conversion and low power loss
Reliable performance over wide temperature range
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 360mΩ
Continuous Drain Current (Id): 9.5A
Input Capacitance (Ciss): 510pF
Power Dissipation (Pd): 38W
Quality and Safety Features
ROHS3 compliant
TO-220F-3 package for reliable thermal performance
Compatibility
Suitable for a wide range of high-voltage, high-current power conversion applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial electronics
Product Lifecycle
This product is currently in active production with no plans for discontinuation. Replacement or upgrade options are available.
Key Reasons to Choose
High voltage and current handling capability
Efficient power conversion with low on-resistance
Wide operating temperature range for reliable performance
Compact and thermally-optimized TO-220F-3 package