Manufacturer Part Number
FQPF10N20C
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-Channel power MOSFET in a TO-220 package.
Product Features and Performance
High-voltage 200V MOSFET
Low on-resistance of 360mΩ at 4.75A, 10V
High current capability of 9.5A continuous drain current at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 510pF at 25V
Low gate charge of 26nC at 10V
Product Advantages
Excellent performance for power switching applications
High power density and efficiency
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (Vdss): 200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 360mΩ @ 4.75A, 10V
Drain Current (Id): 9.5A continuous at 25°C
Input Capacitance (Ciss): 510pF @ 25V
Gate Charge (Qg): 26nC @ 10V
Quality and Safety Features
Robust TO-220 package with high thermal and mechanical reliability
Stringent quality control and testing procedures
Compliance with relevant safety and environmental standards
Compatibility
Suitable for a wide range of power switching applications, including motor drives, power supplies, and industrial controls.
Application Areas
Power conversion and control
Motor drives
Switching power supplies
Industrial and automotive electronics
Product Lifecycle
This product is an active and widely used power MOSFET device.
Replacement or upgrade options are available from the manufacturer and other vendors.
Key Reasons to Choose This Product
Excellent performance and efficiency for power switching applications
Reliable and robust design in a popular TO-220 package
Wide operating temperature range and high current capability
Low on-resistance and gate charge for improved system efficiency
Availability of replacement and upgrade options from the manufacturer
FQPF10N20C MOSFairchild (onsemi)