FQP9N90C - Fairchild Semiconductor

Manufacturer Part Number

FQP9N90C

Manufacturer

Fairchild (onsemi)

Introduction

High-voltage N-channel MOSFET transistor

Product Features and Performance

Operating temperature range: -55°C to 150°C

Drain-to-source voltage (Vdss): 900V

Maximum gate-to-source voltage (Vgs): ±30V

On-state resistance (RDS(on)): 1.4Ω @ 4A, 10V

Continuous drain current (ID): 8A @ 25°C (Tc)

Input capacitance (Ciss): 2730pF @ 25V

Maximum power dissipation: 205W (Tc)

N-channel MOSFET technology

Product Advantages

High voltage rating

Low on-state resistance

High current handling capability

Suitable for a wide range of high-power applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 900V

Gate-to-source voltage (Vgs): ±30V

On-state resistance (RDS(on)): 1.4Ω

Continuous drain current (ID): 8A

Input capacitance (Ciss): 2730pF

Quality and Safety Features

MOSFET technology for high reliability

Suitable for high-power, high-voltage applications

Operates within a wide temperature range

Compatibility

Compatible with a variety of high-power electronic circuits and systems

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and available for purchase

Replacement or upgrade options may be available, but specific information is not provided

Key Reasons to Choose This Product

High voltage rating up to 900V

Low on-state resistance for efficient power conversion

High current handling capability of 8A

Suitable for a wide range of high-power applications

MOSFET technology for high reliability and performance