Manufacturer Part Number
FQP9N25C
Manufacturer
onsemi
Introduction
High-voltage N-channel power MOSFET
Product Features and Performance
Optimized for high-voltage, high-power applications
High breakdown voltage of 250V
Low on-resistance of 430mΩ
Continuous drain current of 8.8A at 25°C
High power dissipation of 74W
Product Advantages
Excellent high-voltage and high-power performance
High reliability and efficiency
Suitable for a variety of high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 250V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 430mΩ
Continuous Drain Current (Id): 8.8A
Input Capacitance (Ciss): 710pF
Power Dissipation (Tc): 74W
Quality and Safety Features
Designed and manufactured to high quality standards
Robust and reliable performance
Suitable for use in safety-critical applications
Compatibility
Compatible with a wide range of high-voltage, high-power circuits and systems
Application Areas
Switching power supplies
Motor drives
Inverters
Amplifiers
Industrial control systems
Product Lifecycle
This product is currently in active production
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent high-voltage and high-power performance
Low on-resistance for high efficiency
High reliability and durability
Suitable for a wide range of high-power applications
Manufactured to high quality standards for safety-critical use
