Manufacturer Part Number
FQP90N10V2
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor designed for power switching applications
Product Features and Performance
100V drain-to-source voltage rating
90A continuous drain current at 25°C case temperature
10mΩ maximum on-resistance at 45A, 10V gate-to-source voltage
Wide operating temperature range of -55°C to 175°C
Low input capacitance of 6150pF at 25V drain-to-source voltage
250W maximum power dissipation at 25°C case temperature
Product Advantages
Excellent performance for power switching applications
High current handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Maximum gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 10mΩ @ 45A, 10V
Continuous drain current (Id): 90A at 25°C case temperature
Input capacitance (Ciss): 6150pF @ 25V
Power dissipation (Pd): 250W at 25°C case temperature
Quality and Safety Features
TO-220-3 package for reliable through-hole mounting
Designed and manufactured to onsemi's high-quality standards
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Power switching in power supplies, motor drives, and other power electronics systems
Product Lifecycle
This product is an actively supported part of onsemi's portfolio
Replacements and upgrades may be available as technology evolves
Several Key Reasons to Choose This Product
High current handling and low on-resistance for efficient power conversion
Wide operating temperature range for use in demanding environments
Reliable through-hole package and onsemi's high-quality manufacturing
Proven performance and compatibility with a variety of power electronics applications
