Manufacturer Part Number
FQP8N90C
Manufacturer
Fairchild (onsemi)
Introduction
High-voltage, N-channel MOSFET transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 900 V
Gate-Source Voltage (Vgs) of ±30 V
On-Resistance (Rds(on)) of 1.9 Ω at 3.15 A, 10 V
Continuous Drain Current (Id) of 6.3 A at 25°C
Input Capacitance (Ciss) of 2080 pF at 25 V
Power Dissipation (Pd) of 171 W at 25°C
Product Advantages
High-voltage operation
Low on-resistance for efficient power conversion
Suitable for high-power switching applications
Key Technical Parameters
MOSFET technology
N-channel FET type
Threshold Voltage (Vgs(th)) of 5 V at 250 A
Gate Charge (Qg) of 45 nC at 10 V
Quality and Safety Features
Operating temperature range of -55°C to 150°C
Through-hole mounting
Compatibility
Compatible with various high-power switching applications
Application Areas
Power supplies
Inverters
Motor drives
Lighting ballasts
Battery chargers
Product Lifecycle
Currently available
No information on discontinuation or replacement
Several Key Reasons to Choose This Product
High-voltage operation up to 900 V
Low on-resistance for efficient power conversion
Suitable for a wide range of high-power switching applications
Reliable performance within the specified operating temperature range
Through-hole mounting for easy integration into existing designs