Manufacturer Part Number
FQP8N80C
Manufacturer
Fairchild (onsemi)
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
High drain-to-source breakdown voltage (800V)
Low on-state resistance (1.55Ω @ 4A, 10V)
High continuous drain current (8A @ 25°C)
Wide operating temperature range (-55°C to 150°C)
Low gate charge (45nC @ 10V)
Suitable for high-frequency switching applications
Product Advantages
Reliable and durable performance
Efficient power handling
Suitable for a variety of power conversion applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-State Resistance (Rds(on)): 1.55Ω @ 4A, 10V
Continuous Drain Current (Id): 8A @ 25°C
Input Capacitance (Ciss): 2050pF @ 25V
Power Dissipation (Pd): 178W @ Tc
Quality and Safety Features
Rigorous quality control and testing
Compliance with relevant safety standards
Compatibility
Through-hole mounting (TO-220-3 package)
Compatible with a wide range of power electronic circuits and systems
Application Areas
Switch-mode power supplies
Motor drives
Inductive load switching
Industrial and consumer electronics
Product Lifecycle
Current production model
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power handling capability
Efficient and reliable performance
Suitable for high-frequency switching applications
Wide operating temperature range
Proven quality and safety standards
