Manufacturer Part Number
FQP8N80C
Manufacturer
onsemi
Introduction
High-voltage N-channel power MOSFET in a TO-220 package
Product Features and Performance
Wide operating temperature range of -55°C to 150°C
High drain-source voltage rating of 800V
Low on-state resistance (RDS(on)) of 1.55Ω at 4A, 10V
High continuous drain current (ID) of 8A at 25°C
Product Advantages
Suitable for high-voltage, high-power applications
Excellent thermal performance
Reliable and robust design
Key Technical Parameters
Drain-Source Voltage (VDS): 800V
Gate-Source Voltage (VGS): ±30V
On-State Resistance (RDS(on)): 1.55Ω at 4A, 10V
Continuous Drain Current (ID): 8A at 25°C
Input Capacitance (Ciss): 2050pF at 25V
Power Dissipation (Pd): 178W at Tc
Quality and Safety Features
RoHS3 compliant
Tested for reliability and performance
Compatibility
TO-220-3 package, suitable for through-hole mounting
Application Areas
High-voltage, high-power switching applications
Power supplies, motor drives, and industrial controls
Product Lifecycle
Currently in production
Availability of replacements or upgrades may depend on market demands
Several Key Reasons to Choose This Product
Excellent high-voltage and high-power handling capabilities
Low on-state resistance for efficient power conversion
Wide operating temperature range for reliable performance
Robust and reliable design for long-term use
RoHS3 compliance for environmental sustainability
FQP8N25FSC