FQP9N90C - onsemi

Manufacturer Part Number

FQP9N90C

Manufacturer

onsemi

Introduction

High voltage, high power N-channel MOSFET

Product Features and Performance

Drain-to-source voltage up to 900V

On-resistance as low as 1.4Ω

Continuous drain current up to 8A at 25°C

Fast switching speed

High power density

Product Advantages

Excellent power conversion efficiency

Reliable and robust design

Suitable for high voltage, high power applications

Key Technical Parameters

Drain-to-source voltage (Vdss): 900V

Gate-to-source voltage (Vgs): ±30V

On-resistance (RDS(on)): 1.4Ω @ 4A, 10V

Drain current (ID): 8A continuous at 25°C

Input capacitance (Ciss): 2730pF @ 25V

Power dissipation (Ptot): 205W at Tc

Quality and Safety Features

Compliant with RoHS3 directive

Housed in a reliable TO-220-3 package

Compatibility

Compatible with a wide range of high voltage, high power applications

Application Areas

Switching power supplies

Motor drives

Inverters

Industrial and automotive electronics

Product Lifecycle

Currently in production

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent power handling capability

Low on-resistance for high efficiency

Fast switching speed for improved power conversion

Reliable and robust design for long-term use

Suitable for a wide range of high voltage, high power applications