IRF100B201 - Infineon Technologies

Manufacturer Part Number

IRF100B201

Manufacturer

Infineon Technologies

Introduction

High-performance N-channel MOSFET designed for high-power switching applications

Product Features and Performance

Wide operating temperature range of -55°C to 175°C

High drain-source voltage of 100V

Low on-resistance of 4.2mΩ at 115A, 10V

High continuous drain current of 192A at 25°C

Fast switching speed with low gate charge of 255nC at 10V

Product Advantages

Excellent thermal performance and reliability

Optimized for high-power switching applications

Low power loss and high energy efficiency

Key Technical Parameters

Drain-source voltage (Vdss): 100V

Gate-source voltage (Vgs): ±20V

On-resistance (Rds(on)): 4.2mΩ @ 115A, 10V

Continuous drain current (Id): 192A @ 25°C

Input capacitance (Ciss): 9500pF @ 50V

Power dissipation (Pd): 441W @ 25°C

Quality and Safety Features

RoHS3 compliant

Qualified to military and industrial standards

Compatibility

Suitable for a wide range of high-power switching applications, such as motor drives, power supplies, and industrial power conversion systems

Application Areas

High-power switching applications

Motor drives

Power supplies

Industrial power conversion

Product Lifecycle

This product is currently in production and is not nearing discontinuation

Replacement or upgrade options may be available from Infineon Technologies

Several Key Reasons to Choose This Product

Excellent thermal performance and reliability

Optimized for high-power switching applications

Low power loss and high energy efficiency

Wide operating temperature range

High drain-source voltage and continuous drain current

Fast switching speed with low gate charge