Manufacturer Part Number
IRF100S201
Manufacturer
Infineon Technologies
Introduction
The IRF100S201 is a high-performance N-Channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Continuous Drain Current (Id) of 192A at 25°C
Drain-to-Source Voltage (Vdss) of 100V
On-State Resistance (Rds(on)) of 4.2mΩ at 115A, 10V
Operating Temperature Range of -55°C to 175°C
Input Capacitance (Ciss) of 9500pF at 50V
Power Dissipation (Max) of 441W at Tc
Product Advantages
High current handling capability
Low on-state resistance for improved efficiency
Wide operating temperature range
Surface mount packaging for compact design
Key Technical Parameters
N-Channel MOSFET
Vgs (Max): ±20V
Vgs(th) (Max) @ Id: 4V @ 250A
Gate Charge (Qg) (Max) @ Vgs: 255nC @ 10V
Quality and Safety Features
RoHS3 compliant
HEXFET and StrongIRFET technology for reliable performance
Compatibility
Compatible with TO-263-3, DPak (2 Leads + Tab), TO-263AB package
Application Areas
Power supplies
Motor drives
Inverters
Switching regulators
Industrial and consumer electronics
Product Lifecycle
Active product
Replacements or upgrades may be available
Key Reasons to Choose
High current capability
Low on-state resistance for efficiency
Wide operating temperature range
Reliable HEXFET and StrongIRFET technology
Surface mount packaging for compact designs
IRF1010E MOSIR