Manufacturer Part Number
IRF1010EPBF
Manufacturer
Infineon Technologies
Introduction
High power N-channel MOSFET for power switching applications
Product Features and Performance
High current capability up to 84A continuous drain current at 25°C case temperature
Low on-resistance of 12mΩ maximizes efficiency
High switching speed with low gate charge of 130nC at 10V
Wide operating temperature range of -55°C to 175°C
Product Advantages
Optimized for high efficiency power conversion
Excellent thermal performance
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 12mΩ @ 50A, 10V
Continuous Drain Current (Id): 84A @ 25°C
Quality and Safety Features
RoHS3 compliant
TO-220AB package for efficient heat dissipation
Compatibility
Designed for a wide range of power switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements and upgrades may be available from Infineon
Key Reasons to Choose
High current capability for efficient power conversion
Low on-resistance for minimized power losses
Fast switching speed for improved efficiency
Wide operating temperature range for reliable operation
Robust design and RoHS3 compliance for quality assurance
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