on November 15th 89

Guide to the IRLML6402 Transistor: Pin Configuration, Features, and Datasheet

The IRLML6402, developed by Infineon Technologies, is a robust P-channel HEXFET MOSFET, specially crafted for applications requiring compact and efficient power management. With a -20V threshold and housed in the space-saving Micro3 (SOT-23) package, this MOSFET combines strong electrical performance with minimal thermal impact, making it ideal for small-scale, high-efficiency circuits. This article will explore its distinctive low on-resistance, precise threshold control, pin configuration, and broad application potential in power electronics. By highlighting these features, we’ll discover how the IRLML6402 enhances system efficiency, reliability, and design flexibility across a variety of technological landscapes.

Catalog

Overview of the IRLML6402

The IRLML6402 is a P-channel HEXFET power MOSFET engineered for functioning at -20V. It is encased in a sleek and minimal Micro3 (SOT-23) package. This MOSFET proudly features an impressively low on-resistance relative to its compact dimensions, alongside resilience and swift switching capabilities. These elements make the MOSFET a versatile option for enhancing both efficiency and dependability in a wide range of contexts, such as battery management, portable devices, PCMCIA cards, and compact printed circuit boards.

The cutting-edge manufacturing techniques by International Rectifier achieve an exceptional reduction in on-resistance. This feature, combined with the fast switching and sturdy design typical of HEXFET® MOSFETs, offers a valuable means for power and load management across numerous devices. The Micro3 package, with its thermally optimized lead frame, ensures it occupies the industry’s smallest footprint, perfectly fitting space-limited applications. Its low profile, measuring under 1.1mm, accommodates the sleekest electronic designs while providing superior thermal performance and power management.

In actual scenarios, the IRLML6402 proves its worth in battery management systems by enhancing battery longevity through minimized power loss. Equally in portable devices, its minimal size and effective performance play a role in extending device lifespan and reliability. For those involved in electronic system design, integrating such components can significantly ease the workflow, ensuring devices function within ideal thermal parameters.

Pin Configuration

CAD Models

Symbol

Footprint

3D Visualization

Characteristics of IRLML6402

Feature	Description
Type	P-Channel MOSFET
Package	SOT-23 Footprint
Profile	Low Profile (<1.1mm)
Packaging	Available in Tape and Reel
Switching	Fast Switching
Compliance	Lead-Free, Halogen-Free
Drain-to-Source Voltage (Vds)	-20V
Gate-to-Source Voltage (Vgs)	±12V
On-Resistance (Rds(on))	80mΩ at Vgs -2.5V
Power Dissipation (Pd)	1.3W at 25°C
Continuous Drain Current (Id)	-3.7A at Vgs -4.5V and 25°C
Operating Junction Temperature Range	-55°C to 150°C
Thermal Derating Factor	0.01W/°C

Technical Specifications

Infineon Technologies IRLML6402TR specifications and attributes table.

Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Transistor Element Material	SILICON
Current - Continuous Drain (Id) @ 25℃	3.7A Ta
Number of Elements	1
Operating Temperature (Max.)	150°C
Packaging	Cut Tape (CT)
Series	HEXFET®
Published	2003
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	HIGH RELIABILITY
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Time @ Peak Reflow Temp-Max (s)	30
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	65mΩ @ 3.7A, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	633pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	12nC @ 5V
Drain to Source Voltage (Vdss)	20V
JEDEC-95 Code	TO-236AB
Drain Current-Max (Abs) (ID)	3.7A
Drain-source On Resistance-Max	0.065Ω
Pulsed Drain Current-Max (IDM)	22A
DS Breakdown Voltage-Min	20V
Avalanche Energy Rating (Eas)	11 mJ
Power Dissipation-Max (Abs)	1.3W
RoHS Status	Non-RoHS Compliant

Block Diagram

Tape and Reel Information

Applications

3C Digital Devices

In the sphere of 3C (Computer, Communication, Consumer) digital devices, the IRLML6402 intensely enhances energy efficiency and device responsiveness. Smartphones, laptops, and digital cameras, for example, depend on low-voltage transistors to boost battery life and optimize performance. This leads to improved experiences, evident in the seamless multitasking capabilities of present-day devices. Experience has shown that through strategic component selection, manufacturers achieve a harmony between power usage and device durability.

Medical Electronics

In medical electronics, the IRLML6402 stands out for its reliability and precision. Instruments such as portable ultrasound machines and patient monitoring systems require precise readings under variable loads, where a stable power supply is crucial. Insights from practical applications indicate that the use of sturdy components not only improves device capabilities but also fosters confidence in medical advancements.

Internet of Things (IoT)

The Internet of Things is reshaping technology landscapes, with the IRLML6402 playing a major role. As IoT devices multiply in smart homes and industries, efficient power management becomes a must. This component helps reduce energy usage while enhancing connectivity and responsiveness. Observations suggest that a cohesive strategy for energy consumption alongside innovative design fosters devices that are not only effective but also promote sustainability.

New Energy Solutions

In new energy solutions, such as solar inverters and wind turbine controllers, the IRLML6402 aids in effective energy conversion and management. As the world leans towards renewable energy, using devices that minimize power losses can speed up the transition. Practical learnings indicate that boosting system efficiency significantly contributes to energy conservation and system reliability, emphasizing the role of such components in sustainability efforts.

Battery Systems

The IRLML6402's compatibility with diverse battery systems, like lithium-ion and nickel-metal hydride, is noteworthy. It is useful for battery management systems needing precise control over charging and discharging processes. Actual scenarios highlight the significance of choosing appropriate transistors to extend battery life while ensuring safety. This exact grasp of battery technology drives design selections that lead to enhanced performance and fulfillment of your expectations.

Load Management

For load management, the IRLML6402 offers notable benefits in controlling power distribution across circuits. It facilitates efficient energy allocation while avoiding system overloads, thus preventing failures. Insights from energy distribution systems reveal that strategic load management enhances overall system resilience, showcasing the component’s ability to support balanced energy distribution.

Portable Electronics

In portable electronics, the IRLML6402’s lightweight and compact design enables innovative product configurations without sacrificing performance. Wearables and portable chargers benefit from rapid switching capabilities, culminating in lower power consumption. Design experiences demonstrate that attending to your preferences can steer optimal component choice and arrangement within products.

PCMCIA Cards

In PCMCIA card applications, the IRLML6402 boosts connectivity options while maintaining minimal power utilization. This flexibility is active for devices demanding high bandwidth and adaptability. The ongoing advancement of communication technology demands components that can keep up with swift progress, illustrating the advantage of wise component selection.

Space-Conscious Circuit Boards

For space-conscious circuit board designs, the IRLML6402 is mostly suited, given the premium on real estate. Its efficiency enables higher performance densities, a necessity in compact electronics. Adapting circuit board layouts shows that meticulous planning and component choice can yield smaller, more powerful devices without compromising function.

DC Switching Applications

In DC switching applications, the IRLML6402 excels by offering rapid and dependable switching solutions. Its operational traits can lead to superior circuit designs enhancing both speed and efficiency. Field observations suggest that understanding switching demands permits the creation of circuits that meet your expectations while maximizing operational efficacy.

Load Switching

The role of the IRLML6402 in load switching highlights its flexibility. It ensures effective control over power distribution within various systems, active for system integrity. Industry anecdotes indicate that optimizing load switching can result in considerable energy savings and extended device lifespan, reinforcing its significance in contemporary electronics.

Package

Manufacturer

On April 1, 1999, Siemens Semiconductors experienced a transformative rebranding, adopting the name Infineon Technologies. This shift represented a significant commitment to competitiveness within the ever-evolving microelectronics landscape. Infineon has emerged as a prominent designer and manufacturer, presenting a diverse portfolio of products crafted for various applications, including logic devices, mixed-signal and analog integrated circuits, and discrete semiconductor offerings.

The microelectronics sector is defined by a constant cycle of innovation, driven by the rising demand for advanced electronic solutions. Infineon demonstrates an acute awareness of current market dynamics, concentrating on serious growth segments such as automotive electronics, industrial automation, and the Internet of Things (IoT). Companies that effectively harness emerging technologies, including AI and machine learning, often find themselves in an advantageous position to evolve and flourish. Infineon's targeted investments in research and development are a testament to its ambition to lead the charge in the creation of next-generation semiconductor innovations.