Manufacturer Part Number
IKW25N120T2FKSA1
Manufacturer
Infineon Technologies
Introduction
High-power IGBT (Insulated-Gate Bipolar Transistor) device for industrial applications
Product Features and Performance
Optimized for low conduction and switching losses
Fast switching performance
Robust and reliable design
Suitable for hard and soft-switching topologies
Product Advantages
Improved energy efficiency
Reduced system size and cost
Enhanced system reliability
Key Technical Parameters
Voltage Collector Emitter Breakdown (Max): 1200 V
Current Collector (Ic) (Max): 50 A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Reverse Recovery Time (trr): 195 ns
Gate Charge: 120 nC
Switching Energy: 2.9mJ
Td (on/off) @ 25°C: 27ns/265ns
Quality and Safety Features
RoHS3 Compliant
Robust and reliable design for industrial applications
Compatibility
Through-hole mounting
Application Areas
Power converters
Motor drives
Welding equipment
Induction heating
Uninterruptible power supplies (UPS)
Renewable energy systems
Product Lifecycle
Current product, no discontinuation planned
Upgrades and replacements available as technology advances
Key Reasons to Choose This Product
High energy efficiency through low conduction and switching losses
Fast switching performance for improved system response
Robust and reliable design for industrial applications
Compatibility with a wide range of power electronics systems
Ongoing product support and availability of upgrades
