Manufacturer Part Number
IKW25T120
Manufacturer
Infineon Technologies
Introduction
High-performance IGBT transistor for power electronics applications
Product Features and Performance
NPT, Trench Field Stop IGBT technology
High power density and low conduction losses
Fast switching with low switching losses
Wide operating temperature range of -40°C to 150°C
Product Advantages
Excellent efficiency and thermal performance
Robust design for reliable operation
Optimized for high-frequency switching applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 1200V
Collector Current (Max): 50A
Collector-Emitter Saturation Voltage (Max): 2.2V
Reverse Recovery Time: 200ns
Quality and Safety Features
Compliant with relevant safety and environmental standards
Robust construction for long-term reliability
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Motor drives
Power supplies
Renewable energy systems
Industrial automation
Product Lifecycle
The IKW25T120 is an actively supported product
Replacements and upgrades are available if required
Key Reasons to Choose This Product
High efficiency and power density
Fast switching with low losses
Wide operating temperature range
Robust and reliable design
Optimized for high-frequency applications
